102 research outputs found
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
No full textThe gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress (V Gstress ) from 0 to 13 V, the drain current is found to be stable and decreases at 13 V at OFF-state and increases at ON-state. For V Gstress from 13 to 31 V, the drain current increases at OFF-state and decreases at ON-state, whereas V TH is stable and increases slightly. The changes in drain current characteristic and V TH values of the device after applying various V Gstress are associated with the injection and trapping of holes from the p-GaN layer to the AlGaN layer, supported by the results of pulsed measurements and by the simulation of energy band diagrams. When V Gstress is further increased to a high voltage of 31 V, V TH becomes noisy and a strong luminescence signal occurs with a sudden reduction in the drain current, and finally, a catastrophic failure happens in the gate-channel region
GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio
No full textImproved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
No full textAl0.4Ga0.6N/Al0.15Ga0.85N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter
No full textEffective suppression of the high temperature DC performance degradation of AlInN/GaN HEMTs by back barrier
No full textOptimization of inductively coupled plasma deep etching of GaN and etching damage analysis
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High‐voltage photoconductive semiconductor switches fabricated on semi‐insulating HVPE GaN:Fe template
No full textField-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors
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