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ASCENT plus European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics Extended abstract
No full textASCENT plus European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics Extended abstract
No full textASCENT plus European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics Extended abstract
No full textCharacterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation
No full textCharacterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation
No full textCharacterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation
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An Introduction to Wire-bondless Discrete GaN Power Packages with Top-Side Cu Sinterconnects®
No full textThis work has been conducted within All2GaN project. The ALL2GaN Project (Grant Agreement No 101111890) is supported by the Chips Joint Undertaking and its members including the top-up funding by Austria, Belgium, Czech Republic, Denmark, Germany, Greece, Netherlands, Norway, Slovakia, Spain, Sweden and Switzerland
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
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