1,721,169 research outputs found
4H- and 6H-SiC Rutherford backscattering-channeling spectrometry: polytype finger printing
No full textHigh precision structural measurements on thin epitaxial layers by means of ion-channeling
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Structural, optical and chemical characterization of 300 degrees C, MeV ion implanted and 1700 degrees C annealed 6H-SiC
No full textComparison between chemical and electrical profiles in Al/sup +/ or N/sup +/ implanted and annealed 6H-SiC
No full textElectron-microscopy study of Fe-implanted InP
No full textInP implanted with 200 keV Fe ions to a dose of 1 x 10(14) atoms/cm(2) has been investigated by Transmission Electron Microscopy (TEM). The as-implanted sample exhibits an amorphous surface region. At the annealing temperature of 650 degrees C, nearly complete solid-phase epitaxial regrowth is achieved only for annealing times greater than 1.5 h. For annealing times up to 2 h. however, the samples still contain extended defects such as stacking-fault tetrahedra of vacancy-type and dislocation loops of interstitial-type, mostly concentrated in a band which corresponds to the region of transition between amorphous top layer and crystalline substrate, as was detected in the as-implanted sample. Stacking-fault tetrahedra and loops have also been observed above and below this band, respectively. The origin of these defects is discussed
High-accuracy Characterization of Titanium Films For Linbo3 Guided Wave Devices By Optical Densitometry
No full textTransient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
No full textChanneling Effects In High-energy Implantation of N+ In Silicon
No full textNitrogen implantation of Si single crystals in the 600 keV to 1.4 MeV energy range in random, and alignment conditions on cut silicon wafers was performed. The 6 x 10(13) - 2 x 10(16) cm-2 fluence range was investigated. The beam alignment along the various axial directions was precisely checked by monitoring the backscattered nitrogen signal. RBS-channeling analysis was performed in order to measure the damage profiles. The nitrogen concentration profiles were analyzed by SIMS in all the implanted samples. The behaviour of the channeled component and the amorphization process was studied as a function of the dose for all the implantation orientations. The energy loss of the channeled ions was also estimated
Hydrogen Detection In Ruthenium Oxide Layers By Means of the H-1(n-15,alpha-gamma)c-12 Nuclear-reaction
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