1,721,081 research outputs found

    Strain sensitivity and transport properties in Organic Field Effect Transistors

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    We present the electromechanical characterization of organic field-effect transistors (OFETs) fabricated with different organic semiconductors. Pentacene- and poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OFETs have been investigated as strain sensors, and a clear correlation between the structural and morphological properties of the active layer with the device sensitivity has been observed. The highly disordered structure of polymeric films, as P3HT, confirmed by morphological and structural investigations, gives rise to a dramatic reduction of the device response to mechanical stimuli. Nevertheless, an unambiguous, fast, and reproducible response has been obtained also for this material, which, being solution processible, represents a valuable solution for the fabrication of low-cost pressure sensors for a variety of innovative applications

    Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors

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    Microcontact printing has been used for realizing all organic, highly flexible, ambipolar field effect transistors based on a pentacene-C60 heterojunction. The contacts were patterned using poly(ethylenedioxythiophene): poly(styrenesulfonate) as conductive polymer. We have compared three different device architectures, bottom contact, top contact, and middle contact, and demonstrated in the last case that a perfect balance between n- and p-type mobilities may be obtained, being source ad drain directly interfaced with both semiconductors. This led to a significant improvement of the electrical performances, which, in turn, allowed the realization of all organic complementary inverters

    Ultralow voltage pressure sensors based on organic FETs and compressible capacitors

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    A novel structure for the fabrication of organic pressure sensors is presented. It is based on a polydimethylsiloxane capacitor integrated with a floating-gate organic field-effect transistor (OFET) able to operate at ultralow voltages. The thin-film device, fabricated on a flexible substrate, is specifically conceived for tactile sensing. The main novelty of the working principle consists in the physical separation between the pressure-sensitive area and the active area of the OFET. The complete characterization of the device, in response to the application of different pressures, is provided
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