1,721,052 research outputs found

    Electronic transport and quantum localization effects in organic semiconductors

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    We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in current experimental devices. Starting from the Kubo formula, we describe a theoretical framework that relates the time-dependent quantum dynamics of electrons to the frequency-dependent conductivity. The electron mobility is then calculated through a relaxation time approximation that accounts for quantum localization corrections beyond Boltzmann theory, and allows us to efficiently address the interplay between highly conducting states in the band range and localized states induced by disorder in the band tails. The emergence of a “transient localization” phenomenon is shown to be a general feature of organic semiconductors that is compatible with the bandlike temperature dependence of the mobility observed in pure compounds. Carrier trapping by extrinsic disorder causes a crossover to a thermally activated behavior at low temperature, which is progressively suppressed upon increasing the carrier concentration, as is commonly observed in organic field-effect transistors. Our results establish a direct connection between the localization of the electronic states and their conductive properties, formalizing phenomenological considerations that are commonly used in the literature

    Band dispersion and electronic lifetimes in crystalline organic semiconductors

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    The consequences of several microscopic interactions on the photoemission spectra of crystalline organic semiconductors are studied theoretically. It is argued that their relative roles can be disentangled by analyzing both their temperature and their momentum-energy dependence. Our analysis shows that the polaronic thermal band narrowing, which is the foundation of most theories of electrical transport in organic semiconductors, is inconsistent in the range of microscopic parameters appropriate for these materials. An alternative scenario is proposed to explain the experimental trends

    Band-like motion and mobility saturation in organic molecular semiconductors

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    We analyze a model that accounts for the inherently large thermal lattice fluctuations associated with the weak van der Waals intermolecular bonding in crystalline organic semiconductors. In these materials the charge mobility generally exhibits a “metalliclike” power-law behavior, with no sign of thermally activated hopping characteristic of carrier self-localization, despite apparent mean free paths comparable to or lower than the intermolecular spacing. Our results show that such a puzzling transport regime can be understood from the simultaneous presence of band carriers and incoherent states that are dynamically localized by the thermal lattice disorder

    Spectral properties and isotope effect in strongly interacting systems: Mott-Hubbard insulator versus polaronic semiconductor

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    We study the electronic spectral properties in two examples of strongly interacting systems: A Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed for the high energy part of the spectrum, in which the electrons move in a random field determined by the interplay between magnetic and bosonic fluctuations. When the boson under consideration is a lattice vibration, the resulting isotope effect on the spectral properties is similar in both cases, being strongly temperature and energy dependent, in qualitative agreement with recent photoemission experiments in the cuprates
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