1,721,201 research outputs found
Plasma composition by mass spectroscopy in a Ar-SiH4-H 2 LEPECVD process during nc-Si deposition
No full textPlasma composition by mass spectroscopy in a Ar-SiH4-H 2 LEPECVD process during nc-Si depositio
Langmuir probe plasma parameters and kinetic rates in a Ar-SiH4-H-2 plasma during nc-Si films deposition for photovoltaic applications
No full textStraining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis
Full text linkTop–down SiGe nanostructures on Ge membranes realized by e-beam lithography and wet etching
No full textSiGe nanostructures on Ge membranes have been fabricated by electron beam lithography and anisotropic wet chemical etching, starting from SiGe/Ge heterostructures epitaxially deposited on Si substrates. Two different top-down approaches have been studied in order to obtain the best freestanding structures. We find that the process in which the Ge membrane is suspended after the lithography of the SiGe nanostructures leads to high quality SiGe nanostructures without damage to either the SiGe nanostructures or the Ge membrane. The structures have been systematically analyzed at every step of the fabrication process, by scanning electron microscopy and by atomic force microscopy
Plasma Composition and Kinetic Reaction Rates in a LEPECVD Ar-SiH4-H2 Plasma Durign nc-Si Films Deposition for Photovoltaic Applications
No full textPhotocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells
No full textThe authors studied the direct-gap interband transitions in strain-compensated Ge/SiGe quantum wells grown by low energy plasma enhanced chemical vapor deposition. A series of excitonic interband absorptions from the quantized hole states to the quantized electronic states at the Gamma edge in the Ge wells is observed up to room temperature by photocurrent and transmission spectroscopy. The results are compared with theory. At low temperature, the quantum confined Stark effect is demonstrated in a Schottky diode geometry
Measurement of carrier lifetime and interface recombination velocity in Si-Ge waveguides
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