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Dynamics of electrons in a 2D region coming from a point-contact
No full textBallistic and quasi-ballistic transport in mesoscopic systems is, nowadays, a fundamental tool for the investigation of electronic processes in semiconductors. In this work we present some results concerning a numerical simulation of electrons entering a 2D mesoscopic region from a point contact; a magnetic field is applied perpendicular to the structure and influences the electron dynamics. The simulation is performed through a numerical solution of the Schroedinger equation in a finite-difference scheme. It includes a magnetic field and an arbitrary potential V(r). In this way, the quantum effects of impurities on the conductance of the system have been analysed. The resul shows that each impurity configuration characterizes, in a particular way, the transport properties
Monte Carlo analysis of hot-phonon effects on non-polar semiconductor transport properties
No full textHot-electron conduction in Ovonic materials
No full textElectric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells
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