496 research outputs found
Rodolfo Elias Calles and Norman Borlaug at Centro de Investigaciones Agricolas del Noreste (CIANO)
No full textRodolfo Elias Calles and Norman Borlaug at the Centro de Investigaciones Agricolas del Noreste (CIANO) wheat fields in 1955.Silver GelatinBlack and WhiteRodolfo Elias Calles ChaconNorman Ernest BorlaugMark C. Palmer4"x5
A Simulated Annealing Procedure for the Optimal Configuration of District Heating Networks Through Thermoeconomics
No full text
[Alberto Ciano (c.1924), funerary sculpture]
No full textFrom Berresford: Alberto Ciano (c.1924), Giacamo Zilocchi, Cimitero della Cigna, Livorno.Statue of man wearing uniform holding binoculars standing in front of ship's wheel and other men.Title from Berresford
Annuario dell'anno scolastico 1939-1940
No full textIn testa al front.: R. Convitto Nazionale C. Ciano ed annesso Liceo-Ginnasio parificato Salern
Designing a Low Cost, Low Noise Programmable Gain Instrumentation Amplifier
No full textThe capabilities of a very low cost technology, fully compatible with a standard n-well CMOS process, have been exploited in the design of a programmable gain instrumentation amplifier. Suitable low noise and compact layout characteristics have been achieved by using lateral pnp transistors in the input differential stage of the opamp which constitutes the basic building block of the circuit. This solution allows a unity gain bandwidth of 20 MHz and an equivalent voltage input noise of 6.6 nv/√Hz@1 kHz for the core op amp. Gain programmability is provided by a variable integrated resistor whose value can be selected by means of a digital control circuitry on chi
Dc characterization of lateral bipolar devices in standard CMOS technology: a new model for base current partitioning
No full textAs is generally known, compared with MOSFETs bipolar transistors provide better performance in terms of small signal transconductance, intrinsic cut-off frequency and noise characteristics, at the cost of a more expensive technology. A good compromise between the low costs proper of standardCMOS technology and the excellent performance typical of bipolardevices can be achieved by using bipolar transistors derived from MOS structures. Naturally suitable models combined with efficient parameter extraction techniques are mandatory to provide designers with reliable simulation tools. Adc parameter extraction procedure for a PNP lateral transistor realized in astandardCMOS technology based on an existing composite circuit model is presented here. The extraction results provide accurate fitting between measured and simulated data for different operating regions without resort to numerical optimization, thus preserving the physical meaning of the extracted parameters and retaining a good correlation with process variations
- …
