23 research outputs found
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
No full text
Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
No full text
Pulsed laser deposition of atomically flat La1-xSrxMnO3 thin films using a novel target geometry
No full textA new ablation target geometry is presented that was used to produce thin films of La1-xSrxMnO3 grown heteroepitaxially on SrTiO3 by pulsed reactive crossed-beam laser ablation. The films were grown in order to perform angle-resolved photoelectron spectroscopy, which demands that the surface be atomically flat. In situ and ex situ analysis shows that this condition was met, even after depositing to a thickness of over 100n
(Invited) Three-Dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
No full textBulk vs. surface effects in ARPES experiment from La2/3Sr1/3MnO3 thin films
No full textExperiments directly probing the electronic states using angle-resolved photoemission (ARPES) were carried out on La2/3Sr1/3MnO3 in order to elucidate its electronic properties. ARPES is a surface sensitive technique where bulk and surface states are usually both present. We present high-resolution ARPES studies in the (1 0 0) and (1 1 0) mirror planes and compare them with simulated ARPES based on GGA + U band structure calculations. In the (1 1 0) mirror plane we identify surface umklapps accounted by (root 2 x root 2)R45 degrees surface reconstruction which couple to bulk electronic states. As predicted by the simulated spectra there is additional spectral intensity at the Fermi level detected in ARPES data due to k(perpendicular to)-broadening effects in the photoemission final states. We demonstrate that this additional spectral intensity is a convenient spectral marker for determination of the k(F) Fermi momenta. (C) 2010 Elsevier B.V. All rights reserved.LSN
