38,036 research outputs found
Flooding Policy Makers with Evidence to Save Forests
No full textCorey J. A. Bradshaw, Barry W. Brook, Kelvin S.-H. Peh, Navjot S. Sodh
Risk assessment of Record Brook interbasin water transfer scheme to the aquatic fauna of the Donnelly and Warren Rivers
No full textThis report describes the fishes and freshwater crayfishes of the Donnelly and Warren River catchments and provides a risk assessment to these fauna of the proposed extraction of water from Record Brook (tributary of the Donnelly River) and subsequent transfer to Scabby Gully Dam (Warren River catchment). The proposed location of the structure in Record Brook is at the gauging station ~1 km upstream from the confluence with the Donnelly River. The project aims to divert peak flows in the winter and spring flow period, transferring around 500 ML each year. The size and shape of the interception structure is yet to be determined, but are likely to incorporate a concrete weir < 5m high and a reservoir.
A total of six sites in Record Brook, Donnelly River and Scabby Gully Dam were sampled and these data were collated with additional historical information on the aquatic fauna of both catchments. An overview of fishes and freshwater crayfishes in the Donnelly River is summarised in Morgan & Beatty (2006), the authors recorded a high diversity of native freshwater species [Salamanderfish, Western Minnow, Black-stripe Minnow, Western Mud Minnow, Nightfish, Western Pygmy Perch, Balston’s Pygmy Perch, Freshwater Cobbler, (metamorphosed) ammocoetes of the Pouched Lamprey, Marron, (Restricted) Gilgie, Koonac, Freshwater Shrimp] as well as several estuarine [Western Hardyhead, Blue-spot Goby, South-west Goby] and non-native species [Mosquitofish, Redfin Perch, Rainbow Trout and Brown Trout]. The Donnelly River system is one of only two in south-western Australia that houses all of the endemic fishes of the region. The fauna of Record Brook contrasted that within the main channel sites of the Donnelly River. Within Record Brook, the fauna was dominated by the Pouched Lamprey, Koonac and Rainbow Trout, with the occasional Marron, Western Minnow and Western Pygmy Perch recorded. Within the Donnelly River main channel sites, the captures included Nightfish, Blue-spot Gobies, the Restricted Gilgie, Freshwater Shrimp and introduced Eastern Mosquitofish.The ichthyofauna of the Warren River consists of 14 fish species and is similar to the Donnelly River with the notable absence of Balston’s Pygmy Perch and Salamanderfish. However, in Scabby Gully dam only Marron and Redfin Perch were observed.
The risks of transfer of parasites and disease, feral/native fish or crayfish from Record Brook to Scabby Gully Dam are low. Threats to fish and freshwater crayfish in Record Brook include changes to water quality (altered flow, altered habitat and/or changes in temperature, oxygen, salinity) and requires ongoing monitoring should the project be implemented. The highest threat to fish and freshwater fish would be the barrier to fish movement by construction of the proposed dam. The construction of a fishway at the proposed dam would reduce some of the negative impacts to fish migration but would also require ongoing monitoring. No specially protected fish and/or crayfish species have been recorded in Record Brook. However, Record Brook acts as an important nursery area for the Pouched Lamprey and this species is listed as a Priority Species (Priority 1) by the Department of Environment and Conservation. The contents of this report are intended to inform of future management options and do not constitute, or replace any assessment or approval processes that may be required in accordance with the Environmental Protection Act 1986 and/or Environmental Protection and Biodiversity Conservation Act 1999
Semiconductors V. 33, I. 02
No full textleave(s) : ill; 28 cm.Semiconductors -- February 1999
Volume 33, Issue 2, pp. 107-222
REVIEW
Deep level centers in silicon carbide: A review
A. A. Lebedev
Full Text: PDF (404 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
A. Yu. Andreev, B. A. Andreev, M. N. Drozdov, Z. F. Krasil'nik, M. V. Stepikhova, V. B. Shmagin, V. P. Kuznetsov, R. A. Rubtsova, E. A. Uskova, Yu. A. Karpov, H. Ellmer, L. Palmetshofer, K. Piplits, and H. Hutter
Full Text: PDF (87 kB)
Evidence for epsilon2-conductivity in the magnetoresistance of multivalley semiconductors
N. V. Agrinskaya, V. I. Kozub, T. A. Polyanskaya, and A. S. Saidov
Full Text: PDF (165 kB)
Hot-carrier far infrared emission in silicon
L. A. Kosyachenko and M. P. Mazur
Full Text: PDF (71 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Bragg reflectors for cylindrical waves
V. V. Nikolaev, G. S. Sokolovskii, and M. A. Kaliteevskii
Full Text: PDF (139 kB)
LOW-DIMENSIONAL SYSTEMS
Photo- and electroluminescence in the 1.3-��m wavelength range from quantum-dot structures grown on GaAs substrates
A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, and Zh. I. Alferov
Full Text: PDF (479 kB)
Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, and Yu. G. Musikhin
Full Text: PDF (491 kB)
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, and Zh. I. Alferov
Full Text: PDF (59 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Optical properties of porous silicon layers processed with a HF:HCl:C2H5OH electrolyte
A. I. Belogorokhov and L. I. Belogorokhova
Full Text: PDF (111 kB)
Conductivity of structures based on doped nanocrystalline SnO2 films with gold contacts
B. A. Akimov, A. M. Gas'kov, S. E. Podguzova, M. N. Rumyantseva, L. I. Ryabova, M. Labeau, and A. Tadeev
Full Text: PDF (42 kB)
Influence of the substrate temperature and annealing on the 1.54-��m erbium photoluminescence of a-Si:H films obtained using a glow discharge
E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, G. Weiser, and H. Kuehne
Full Text: PDF (64 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Transport properties and photosensitivity of metal/porous-silicon/c-Si structures
D. G. Yarkin
Full Text: PDF (77 kB)
Gain in injection lasers based on self-organized quantum dots
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, and P. S. Kop'ev
Full Text: PDF (144 kB)
Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, and A. �. Yunovich
Full Text: PDF (168 kB)
Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-��m spectral range
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
Full Text: PDF (116 kB)
High-power light-emitting diodes operating in the 1.9 to 2.1 ��� ��m spectral range
T. N. Danilova, B. E. Zhurtanov, A. L. Zakgeim, N. D. Il'inskaya, A. N. Imenkov, O. N. Saraev, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (76 kB)
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 ��m) due to nonlinear optical effects
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (118 kB)
Long-wavelength photodiodes based on Ga1 ��� xInxAsySb1 ��� y with composition near the miscibility boundary
I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev
Full Text: PDF (115 kB)
ERRATA
Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484���487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs [Semiconductors 32, 479���483 (May 1998)]
I. L. Bronevoi and A. N. Krivonosov
Full Text: PDF (28 kB)
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048���1053 (October 1998)]
N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (19 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
A Field Course to Improve Student Performance and Scientific Interest in Applied Hydrology
No full textv. : ill.; 28 cm (original analog pub.)Long Island Geologists is a program of the Department of Geosciences at Stony Brook University.
Each year the activities include one or two field trips and on a Saturday in April a conference on the "Geology of Long Island and Metropolitan New York." Teachers and professional geologists can receive in-service credit for participating in these events. The abstracts contaiend within this collection are digital representations or copies of papers presented over the years at the various conferences that were held. For additional information on a particular topic or paper contact the original author(s).Archived web contentThe digital publication of the Long Island Geologists' Abstracts Collection was made possible through a collaboration between the LIG and the Special Collections and University Archvies, Stony Brook University Libraries.Additional information on the Long Island Geologists may be found at: http://pbisotopes.ess.sunysb.edu/lig/.
Information on the Long Island Association of Professional Geologists may be found at:
www.liapg.org
Doklady Physics V. 50, I. 03
No full textleave(s) : ill; 28 cm.Doklady Physics -- March 2005
Volume 50, Issue 3, pp. 119-164
PHYSICS
Relaxation while Settling a Scaling-Invariant Distribution of Fluctuations in Random Processes with 1/f Noise
V. P. Koverda and V. N. Skokov
pp. 119-122 Full Text: PDF (54 kB)
Prismatic Carbon Nanotubes: Characteristic Features of Their Crystal Structure in Electron Diffraction Patterns and the Determination of Chirality Angle
L. D. Grigor'eva
pp. 123-127 Full Text: PDF (107 kB)
Revision of the Theory of Energetic-Particle Modes in Tokamaks
A. B. Mikhailovskii, E. A. Kovalishen, S. V. Konovalov, and M. S. Shirokov
pp. 128-131 Full Text: PDF (58 kB)
TECHNICAL PHYSICS
Failure of Concrete and Reinforced-Concrete Plates under High-Speed Shock and Explosion
S. A. Afanas'eva, N. N. Belov, D. G. Kopanitsa, N. T. Yugov, and A. A. Yugov
pp. 132-135 Full Text: PDF (1151 kB)
THEORETICAL PHYSICS
Limited Distributions in the Statistical Theory of Gas Disperse Systems
Yu. I. Yalamov and A. N. Golov
pp. 136-139 Full Text: PDF (48 kB)
MECHANICS
First Integrals in the Problem of the Motion of a Heavy Rigid Body Suspended on a String
A. A. Burov
pp. 140-142 Full Text: PDF (45 kB)
Shaping a Nozzle with a Central Body by the Chaplygin Method
�. G. Shifrin and Ch. V. Kim
pp. 143-146 Full Text: PDF (52 kB)
Nonlinear Sinusoidal and Varicose Instability in a Boundary Layer
Yu. A. Litvinenko, V. G. Chernorai, V. V. Kozlov, L. Lofdahl, G. R. Grek, and H. H. Chun
pp. 147-150 Full Text: PDF (283 kB)
Effect of Non-Coulomb Dry Friction on the Stability of Automatic Systems
V. N. Shamberov
pp. 151-153 Full Text: PDF (48 kB)
Calculation of Potential Flows
K. N. Anakhaev
pp. 154-157 Full Text: PDF (64 kB)
Vibrations and Stability of a Viscoelastic Strip Placed into Gas Flow
I. A. Kiiko and V. V. Pokazeev
pp. 158-160 Full Text: PDF (46 kB)
Problem of Designing an Aerodynamic Profile with Assigned Characteristics of Electromagnetic Scattering
M. S. Soppa
pp. 161-164 Full Text: PDF (53 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
JETP Letters V. 70, I .04
No full textleave(s) : ill; 28 cm.JETP Letters -- August 25, 1999
Volume 70, Issue 4, pp. 233-319
FIELDS, PARTICLES, AND NUCLEI
Influence of Lambda NN forces and the nuclear core size on the Lambda7Li level spectrum
V. N. Fetisov
Full Text: PDF (76 kB)
Isotope shifts in finite nuclei and the pairing properties of nuclear matter
S. A. Fayans
Full Text: PDF (86 kB)
Discovery of a narrow resonance state of the system KSKS at mass 1520 MeV
B. P. Barkov, V. V. Vladimirskii, V. K. Grigor'ev, O. N. Erofeeva, Yu. V. Katinov, I. Ya. Korol'kov, V. I. Lisin, V. N. Luzin, V. N. Nozdrachev, V. V. Sokolovskii, G. D. Tikhomirov, S. A. Uzunyan, Yu. P. Shkurenko, and I. A. Gridnev
Full Text: PDF (109 kB)
ATOMS, SPECTRA AND RADIATION
Total conversion of the polarization of electromagnetic waves during excitation of cyclotron polaritons in a two-dimensional electron system
V. V. Popov and T. V. Teperik
Full Text: PDF (164 kB)
Self-deflection of laser beams during holographic recording in photorefractive crystals
M. P. Petrov, A. P. Paugurt, and V. V. Bryksin
Full Text: PDF (41 kB)
Far-IR radiation of hot holes in germanium for mutually perpendicular directions of uniaxial pressure and electric field
V. N. Bondar, A. T. Dalakyan, L. E. Vorob'ev, D. A. Firsov, and V. N. Tulupenko
Full Text: PDF (48 kB)
PLASMA, GASES
Observation of MeV ions in long-pulse, large-scale laser-produced plasmas
F. B. Rosmej, D. H. H. Hoffmann, W. Suess, M. Geissel, P. Pirzadeh, M. Roth, W. Seelig, A. Ya. Faenov, I. Yu. Skobelev, A. I. Magunov, T. A. Pikuz, R. Bock, U. N. Funk, U. Neuner, S. Udrea, A. Tauschwitz, N. A. Tahir, B. Yu. Sharkov, and N. E. Andreev
Full Text: PDF (183 kB)
Ohm's law in a chiral plasma
O. G. Chkhetiani and S. S. Moiseev
Full Text: PDF (56 kB)
CONDENSED MATTER
On the state of supersaturation of a 2D electron system on a liquid-helium surface
V. B. Shikin
Full Text: PDF (46 kB)
Optical phonon spectrum of germanium quantum dots
A. B. Talochkin, V. A. Markov, A. I. Nikiforov, and S. A. Tiis
Full Text: PDF (201 kB)
Dependence of the resistivity of nonstoichiometric titanium carbide TiCy on the density and distribution of carbon vacancies
V. N. Lipatnikov and A. I. Gusev
Full Text: PDF (65 kB)
Bistability of quantum magnetotransport in a multilayer Ge/p-Ge1 ��� xSix heterostructure with wide potential wells
M. V. Yakunin, Yu. G. Arapov, V. N. Neverov, and O. A. Kuznetsov
Full Text: PDF (67 kB)
Magnetoplastic effect in InSb
E. V. Darinskaya, E. A. Petrzhik, S. A. Erofeev, and V. P. Kisel'
Full Text: PDF (102 kB)
Giant red shift of the absorption edge in La0.9Sr0.1MnO3
R. V. Demin, L. I. Koroleva, and A. M. Balbashov
Full Text: PDF (34 kB)
ERRATA
Erratum: Anomalous magnetic properties of the complex (ET)2C60 [JETP Lett. 69, 785���791 (25 May 1999)]
S. V. Demishev, A. A. Pronin, N. E. Sluchanko, L. Weckhuysen, V. V. Moshchalkov, N. G. Spitsina, and �. B. Yagubskii
Full Text: PDF (11 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 32, I. 10
No full textleave(s) : ill; 28 cm.Semiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
Full Text: PDF (84 kB)
Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
Full Text: PDF (76 kB)
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
Full Text: PDF (740 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
Full Text: PDF (94 kB)
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (297 kB)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (83 kB)
Nitrogen divacancies ��� the possible cause of the "yellow band" in the luminescence spectra of GaN
A. �. Yunovich
Full Text: PDF (60 kB)
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
Full Text: PDF (104 kB)
Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 ��� z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
Full Text: PDF (74 kB)
Differential methods for determination of deep-level parameters from recombination currents of p���n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (109 kB)
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
Full Text: PDF (90 kB)
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
Full Text: PDF (60 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (46 kB)
Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
Full Text: PDF (79 kB)
Photoluminescence of the space charge region of metal���zinc selenide contacts
V. P. Makhnii and M. M. Sletov
Full Text: PDF (57 kB)
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (113 kB)
LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
Full Text: PDF (238 kB)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
Full Text: PDF (297 kB)
Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
Full Text: PDF (119 kB)
Shallow acceptors in strained multiquantum-well Ge/Ge1 ��� xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
Full Text: PDF (119 kB)
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
Full Text: PDF (114 kB)
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
Full Text: PDF (86 kB)
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
Full Text: PDF (94 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
Full Text: PDF (76 kB)
Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
Full Text: PDF (63 kB)
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
Full Text: PDF (55 kB)
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
Full Text: PDF (61 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
Full Text: PDF (227 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 33, I. 03
No full textleave(s) : ill; 28 cm.Semiconductors -- March 1999
Volume 33, Issue 3, pp. 265-372
REVIEW
Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
E. G. Guk, A. V. Kamanin, N. M. Shmidt, V. B. Shuman, and T. A. Yurre
Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Dielectric properties of the semiconducting compounds Cd1���xFexTe
P. V. Zukowski, J. Partyka, P. Wegierek, J. W. Sidorenko, J. A. Szostak, and A. Rodzik
Full Text: PDF (56 kB)
Current-illumination characteristics of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
Full Text: PDF (95 kB)
Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
Full Text: PDF (117 kB)
Raman scattering spectroscopy of Zn1 ��� xCdxSe films grown on GaAs substrates by molecular-beam epitaxy
L. K. Vodop'yanov, N. N. Mel'nik, and Yu. G. Sadof'ev
Full Text: PDF (59 kB)
Optical and photoelectric properties of Zn1 ��� xFexTe crystals
Yu. P. Gnatenko, I. A. Farina, and R. V. Gamernyk
Full Text: PDF (83 kB)
Calculating the band structure of InSb1 ��� xBix solid solutions
V. G. Deibuk, Ya. I. Viklyuk, and I. M. Rarenko
Full Text: PDF (108 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Effective charge carrier lifetime in CdHgTe variable-gap structures
V. M. Osadchii, A. O. Suslyakov, V. V. Vasil'ev, and S. A. Dvoretsky
Full Text: PDF (84 kB)
Polarization photosensitivity of GaN/Si heterojunctions
V. M. Botnaruk, S. D. Raevsky, V. V. Belkov, Yu. V. Zhilyaev, Yu. V. Rud, L. M. Fedorov, and V. Yu. Rud
Full Text: PDF (103 kB)
Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures
I. Ya. Gerlovin, Yu. K. Dolgikh, S. A. Eliseev, Yu. P. Efimov, I. A. Nodokus, V. V. Ovsyankin, V. V. Petrov, and B. Ya. Ber
Full Text: PDF (58 kB)
Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures
E. I. Goldman, A. G. Zhdan, and N. F. Kukharskaya
Full Text: PDF (120 kB)
LOW-DIMENSIONAL SYSTEMS
Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures
L. K. Orlov, R. A. Rubtsova, and N. L. Orlova
Full Text: PDF (94 kB)
Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, I. G. Malkina, B. N. Zvonkov, and Yu. N. Saf'yanov
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Comparative study of the optical properties of porous silicon and the oxides SiO and SiO2
A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe
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Photosensitive structures based on porous silicon
�. B. Kaganovich, �. G. Manoilov, and S. V. Svechnikov
Full Text: PDF (84 kB)
Photoconductivity of amorphous hydrated silicon doped by ion implantation
A. G. Kazanskii, N. V. Ryzhkova, and S. M. Pietruszko
Full Text: PDF (74 kB)
Electronic properties and structure of a-Si : H films with higher photosensitivity
O. A. Golikova and M. M. Kazanin
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PHYSICS OF SEMICONDUCTOR DEVICES
Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them
S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli
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Temperature dependence of the quantum efficiency of silicon p ��� n photodiodes
Yu. A. Goldberg, V. V. Zabrodsky, O. I. Obolensky, T. V. Petelina, and V. L. Suhanov
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Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, and M. F. Kokorev
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Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
G. G. Zegrya, M. P. Mikhailova, T. N. Danilova, A. N. Imenkov, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev
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Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
B. E. Zhurtanov, K. D. Moiseev, M. P. Mikhailova, T. I. Voronina, N. D. Stoyanov, and Yu. P. Yakovlev
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Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors
E. V. Astrova, V. B. Voronkov, A. A. Lebedev, A. N. Lodygin, and A. D. Remenyuk
Full Text: PDF (144 kB)
Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter
G. G. Babichev, S. I. Kozlovskii, and V. A. Romanov
Full Text: PDF (151 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
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