2,970 research outputs found
Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging
Full text linkHfO2 is investigated for its suitability to act as an oxygen and moisture barrier to
prevent Cu oxidation in redistribution layers (RDLs) in 3D packaging technologies. HfO2
barriers of varying thicknesses were deposited via atomic layer deposition (ALD) on Cu
surfaces and then stressed by (i) high temperature stress and (ii) humidity and thermal stress
for 1000 h to ascertain the optimal thickness to prevent oxidation of the Cu. The thickness of
the ALD HfO2 film was monitored by ellipsometry, while the extent of Cu oxidation was
monitored by focus ion beam prepared SEM cross sections. It is found that ∼9 nm of HfO2 is
sufficient to prevent Cu oxidation
On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
No full textCharacterisation of electroless deposited cobalt by hard and soft X-ray photoemission spectroscopy
No full textNucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayers
No full text
The role of atomic oxygen in the decomposition of self-assembled monolayers during area-selective atomic layer deposition
No full textsponsorship: The authors would like to gratefully acknowledge that this project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No. 888163. The authors would also like to gratefully acknowledge financial support from the Science Foundation Ireland Principal Investigator programme under Grant No. 13/IA/1955. This work was carried out within the IMEC Industrial Affiliation Programme on Advanced Interconnects (IIAP). (European Union|888163, Science Foundation Ireland Principal Investigator programme|13/IA/1955, Marie Curie Actions (MSCA)|888163, Science Foundation Ireland (SFI)|13/IA/1955)status: Publishe
Autograph of Anita Hill in "Speaking Truth to Power"
No full textThe title page and an autograph by the author, Anita Hill, in their work ""Speaking Truth to Power"
Boyd at Genealogy Fair 2018
Full text linkAnita Boyd, guest speaker, shares her remarks during the 2018 Genealogy Fairhttps://scholarsjunction.msstate.edu/libep-events-genealogy/1083/thumbnail.jp
Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration
No full textThe authors acknowledge IMEC's Industrial Affiliation Program on Nano-Interconnects, Imec's p-line for support in the manufacturing of the patterned test wafers. This project has received funding from the European Union's Horizon 2020 Research and Innovation Program under the Marie Sklodow-ska-Curie grant agreement No. 888163. The authors would like to thank Philippe Marien for his support with the manufacturing of planar capacitor wafers, Jan-Willem Clerix for coding the script used to compute the PSDs, and Hans Billington and Inge Manders for their help with the SEM measurements. Gelest and Pegasus are kindly acknowledged for providing the ALD precursors free of charge
Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration
No full textThe rush for better-performing electronics, and manufacturing processes that heavily rely on "top-down" patterning techniques, is making the integration of "self-aligned" fabrication methods, such as area-selective deposition (ASD), a critical objective for continued device scaling. The fully self-aligned via (FSAV) scheme is broadly proposed as a "killer application" to determine whether ASD can shift from an R&D process to high-volume manufacturing. Nevertheless, the lack of a suitable low-κ deposition process has prevented the realization of FSAV by dielectric-on-dielectric ASD. This is primarily due to the high temperature and/or strong oxidizers employed during low-κ dielectric deposition and their unsuitability in the presence of organic masks, such as self-assembled monolayers (SAMs), used to prevent material nucleation during ASD. In this work, AlOx and Al-silicate atomic layer deposition (ALD) processes are studied to provide suitable materials for ASD-enabled FSAV. Dimethylaluminum isopropoxide and H2O are utilized to deposit the metal oxide, whereas Al-silicate is grown by adding 2,2-dimethoxy-1,6-diaza-2-silacyclooctane (DMDAcO) pulses to the AlOx ALD cycle. The selectivity of such processes is demonstrated on 50 nm Cu/SiO2 structures, using octadecanethiol-derived SAMs to inhibit material nucleation on the metal lines. Scanning and transmission electron microscopies are employed to assess the quality of the ASD processes and investigate the mechanisms behind defect generation on a nongrowth surface. X-ray photoelectron spectroscopy measurements show the high purity of the AlOx film, whereas DMDAcO-ligand incorporation into the Al-silicate matrix is observed. Planar capacitor structures are used to assess the electrical properties of both ASD films, revealing that the silicate film exhibits a relatively low κ-value (5.3 ± 0.2), with a high acceleration field factor (32.4 ± 1.4) and a dielectric breakdown voltage of 6.0 ± 0.3 V at 100 °C.sponsorship: The authors acknowledge IMEC's Industrial Affiliation Program on Nano-Interconnects, Imec's p-line for support in the manufacturing of the patterned test wafers. This project has received funding from the European Union's Horizon 2020 Research and Innovation Program under the Marie Sklodow-ska-Curie grant agreement No. 888163. The authors would like to thank Philippe Marien for his support with the manufacturing of planar capacitor wafers, Jan-Willem Clerix for coding the script used to compute the PSDs, and Hans Billington and Inge Manders for their help with the SEM measurements. Gelest and Pegasus are kindly acknowledged for providing the ALD precursors free of charge. (European Union|888163, Marie Curie Actions (MSCA)|888163)status: Publishe
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