343,051 research outputs found
When No Law is Better than a Good Law
Get PDFThis paper argues, both theoretically and empirically, that sometimes no security law may be better than a good security law that is not enforced. The first part of the paper formalizes the sufficient conditions under which this happens for any law. The second part of the paper shows that a specific security law - the law prohibiting insider trading - may satisfy these conditions, which implies that our theory predicts that it is sometimes better not to have an insider trading law than to have an insider trading law but not enforce it. The third part of the paper takes this prediction to the data. We revisit the panel data set assembled by Bhattacharya and Daouk (2002), who showed that enforcement, not the mere existence, of insider trading laws reduced the cost of equity in a country. We find that the cost of equity actually rises when a country introduces an insider trading law, but does not enforce it.
Convergence of Bhattacharya bounds- revisited
No full textIt is proved that for all estimable functions and all multiparameter exponential families, Bhattacharya bounds converge to the variance of the minimum variance unbiased estimate, provided the true value is an interior point of the parameter space. The special case of orthogonal Bhattacharya functions is briefly discussed and the variance is explicitly computed in a reliability problem
Convergence of Bhattacharya bounds- revisited
No full textIt is proved that for all estimable functions and all multiparameter exponential families, Bhattacharya bounds converge to the variance of the minimum variance unbiased estimate, provided the true value is an interior point of the parameter space. The special case of orthogonal Bhattacharya functions is briefly discussed and the variance is explicitly computed in a reliability problem
Band Alignment and Electrical Investigations of Ultra-Thin Al2O3 on Si by E-beam Evaporation
No full textThe continuous downscaling leads the search of high-gate dielectrics. The films amorphous in nature offered good mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, 16 nm thick amorphous Al2O3 films on silicon substrate are fabricated by E-beam evaporation. The high value of refractive index (1.76) extracted from ellipsometry analysis directs the deposition of compact film. The AFM analysis reveal a flat surface with small RMS surface roughness 1.5 angstrom. The band gap is extracted from O-1s electron loss spectra and was found 6.7 eV and band alignment of Al2O3/Si is derived from the UPS measurements. The films are incorporated in Metal Insulator -Semiconductor (MIS) capacitor to perform the electrical measurement. The flat band voltage (V-FB), dielectric constant () and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are - 0.4 V, 8.4 and 2 x 10(11) cm(-2), respectively. The small flat band voltage - 0.4 V, narrow hysteresis and very little frequency dispersion suggest an exceptional good Al2O3/Si interface with small quantity of trapped charges in the oxide. The leakage current density was 4.27 x 10(-8) A/cm(2) at 1 V. The moderate dielectric constant and low leakage current density with ultra-smooth surface is quite useful towards its application in future CMOS and memory devices
Probing of Barrier Induced Deviations in Current-Voltage Characteristics of Polymer Devices by Impedance Spectroscopy
No full textTemperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the devic
Na2Ti6O13 Thin films as Anode for Thin Film Sodium Ion Batteries
No full textThe pulsed laser deposition was employed to produce Na2Ti6O13 (NTO) thin films, which were applied as an anode material for Sodium-Ion batteries (SIBs). X-ray diffraction made it clear that the film is crystalline in single phase. Morphology and elemental composition studies were done using FESEM. Grain size and surface roughness was measured from atomic force microscopy. The electrochemical measurements were performed at 0.5 - 3V range and it exhibited the initial discharge capacity was 49.7 mu Ah/mu m-cm(2) with coulombic efficiency 69.8%
Proctolaelaps reticulatosimilis Bhattacharyya, Sanyal & Bhattacharya 1998
No full textProctolaelaps reticulatosimilis Bhattacharyya , Sanyal & Bhattacharya, 1998 Proctolaelaps reticulatosimilis Bhattacharyya, Sanyal & Bhattacharya, 1998: 40. TYPE DEPOSITORY: National Zoological Collection, Zoological Survey of India, Calcutta [Kolkata], India. TYPE LOCALITY AND HABITAT: Sitala, Sonarpur, 24 Parganas (S), West Bengal, India, in squirrel nest [Animalia: Sciuridae] on banana plant [Plantae: Musaceae].Published as part of De Moraes, Gilberto J., Britto, Erika P. J., Mineiro, Jefferson L. De C. & Halliday, Bruce, 2016, Catalogue of the mite families Ascidae Voigts & Oudemans, Blattisociidae Garman and Melicharidae Hirschmann (Acari: Mesostigmata), pp. 1-299 in Zootaxa 4112 (1) on page 224, DOI: 10.11646/zootaxa.4112.1.1, http://zenodo.org/record/39947
Autour de... France Bhattacharya
No full textAfin de créer de nouveaux espaces de rencontres entre jeunes chercheurs et chercheurs, l'Association Jeunes Etudes Indiennes vous propose de se réunir dans un cadre convivial, autour du parcours et de l'oeuvre d'un chercheur indianiste. Pour cette troisième rencontre, c'est autour de France Bhattacharya que nous nous réunirons. Ce sera l'occasion de revenir sur son parcours de spécialiste de la littérature bengalie et de traductrice. Nous ne manquerons pas non plus d'aborder son parcours au s..
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