1,720,973 research outputs found
High precision analogue memristor state tuning
No full textA report is presented on the operation of an analogue programming circuit for accurately setting the state of a memristor. The circuit exploits the dynamic modulation of resistance under a constant DC bias while real-time measurements of the memristance are performed using an AC signal. The circuit employs feedback for converging the state of a device at any required level within a decade. This allows the memristor to act as an analogue potentiometer, with its resistance corresponding to an input analogue voltage. This implementation was tested with the HP memristor model revealing an accuracy of less than 0.4% (8 bit precision) in relation to the full dynamic range
Pulse-induced resistive and capacitive switching in TiO<sub>2</sub> ReRAM
No full textIn this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM). Biasing the devices with voltage sweeps exhibits non-zero crossing I-V characteristics, serving as a signature of capacitive effects. Here, we show that both resistive and capacitive states can be concurrently set via voltage pulsing
A memristor SPICE model accounting for volatile characteristics of practical ReRAM
No full textRealizing large-scale circuits utilizing the recently discovered nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wealth of biasing conditions. Currently, all availing SPICE memristor models only account for non-volatile characteristics. However, recent works on practical ReRAM also demonstrate volatile effects and it is thus imperative to capture this behavior in the model framework. In this paper, we introduce a new memristor SPICE model that accounts for both non-volatile and volatile effects. The model is demonstrated via a number of simulation cases, benchmarked against measured results acquired by solid-state TiO2 ReRAM
Qualitative SPICE modeling accounting for volatile dynamics of TiO<sub>2</sub> memristors
No full textWe propose a SPICE model that describes qualitatively real memristor device operation. Namely we introduce volatile effects, rate-dependent resistive switching and unipolar effects which can be tailored to influence together or separately the device's resistance. We compare our model's response to different real memristor device dynamics and conclude a high degree of similarity. We also fit our model to volatile resistive switching measured on one of our solid state TiO2 memristors
Applications of solid-state memristors in tunable filters
No full textIn this paper we present a practical approach to employ solid-state TiO2 memristors as tunable loads in filter configurations. First, memristive devices are employed in discrete realizations of tunable active filter topologies. Using an external programming circuit to set the devices to a desired memristive state enables control of the filter's characteristics, namely pass-band boundaries and quality factor. Utilization of a memristor as a tunable load in low-pass and band-pass filter topologies is then experimentally demonstrated. We further expand this concept by demonstrating an amplitude-controlled gain amplifier topology. In this topology, instead of using external control circuitry to set the memristive state, the state is set internally during operation, providing an automatic gain control
Pulse-induced resistive and capacitive switching in TiO2 thin film devices
Full text linkIn this study we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film
Live demonstration: a versatile, low-cost platform for testing large ReRAM cross-bar arrays
No full textWe demonstrate a testing platform that allows the manipulation of memristor cross-bar arrays by use of little more than a computer with MATLAB, an mBED and some external components mounted on a PCB. Users should be able to witness a memristor array being programmed from an arbitrary initial state to a state specified by a binary image the size of the array
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