1,721,305 research outputs found
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study
No full textElectron and hole transport in wurtzite phase ZnO is studied using an ensemble full band Monte Carlo method. The model includes an accurate description of the electronic structure obtained with the nonlocal pseudopotential method and numerically calculated impact ionization transition rates based on a wavevector-dependent dielectric function. Results of transport simulations at both low and high electric fields are presented. It is found that the low field electron mobility is close to 300 cm^2/(V s) at room temperature, and the peak electron drift velocity is 2.2 · 10^7 cm/s at a field of 275 kV/cm. The determination of the ionization coefficients is affected by some uncertainties due to the incomplete knowledge of the high energy phonon scattering rates. Nevertheless, the present calculations of the ionization coefficients provide a reasonably accurate estimate of the impact ionization proces
Theoretical investigation of GaN permeable base transistors for microwave power applications
No full textAn electrical and thermal study of submicron GaN multi-finger permeable base transistors (PBTs) is presented. Carrier transport in the intrinsic finger is studied with drift-diffusion and energy balance models, validated against ensemble Monte Carlo simulation; device performances are optimized through an aggressive geometrical scaling. Non-isothermal analysis of the complete multi-finger structure demonstrates the need for a mobility model whose temperature dependence is not confined to low-field parameters. The potential of GaN PBTs for microwave power applications is finally investigated by evaluating the relevant figures of meri
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth
No full textThis paper presents a theoretical study of the performance of GaN-based avalanche photodetectors using an ensemble Monte Carlo metho
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