1,721,069 research outputs found
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation.
No full textThe RSFs depend on each SIMS instrument and are affected by the particular analytical conditions used to collect the data. In particular some artifacts occur by sputtering silicon with 1keV O2+ at 63° incidence. The surface topography evolves These artifacts have a big impact on the RFSs for any analyte elements in silicon because of a systematic count rates increase of all reference isotope matrix signals. 25 RSFs are here obtained on ion implanted reference materials following the ISO standard 18114:2003, with and without the Zalar rotation installed on the Cameca SC-ultra. These data are eventually compared with the corresponding RSFs published in the 80-90’s obtained by ims3f and 4f instruments
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process
No full textDepth profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process
No full textUltra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques
No full textUltra shallow dopant profiles are one of the major challenges for ULSI silicon metrology. Following the ITRS 2002, the 90nm technology node will appear in 2004 along with the maximum drain extension in the range of 15-25 nm for both P-MOS and N-MOS devices. In this frame, a very abrupt junction with a decay lenght of 4 nm/decade is mandatory. A depth resolution better than 0.7 nm in profiling shallow implanted dopants is consequently required. In this review, after a brief summary on necessities and difficulties of (N-MOS)ultra shallow profiling for the 90 nm technology node, we present a comparison between two Secondary Ion Mass Spectrometry (SIMS) approaches using different instruments (Magnetic Sector and Time of Flight Spectrometers) for the characterization of arsenic ultra shallow profiles. A particular relevance is dedicated to the methodological optimization and data processing, mainly in quantification and depth scale determination. Quantitative SIMS results have been compared with complementary techniques like LEXES, MEIS and RB
Total cross sections for positron scattering on Argon and Krypton at intermediate and high energies
No full textPreliminary total cross section data for positron scattering on argon and krypton between 250 and 5000 eV are presented. A Ramsauer-type apparatus, previously used for electron-scattering measurements has been modified. To check for the convergence between electron and positron total cross sections, a semiempirical analysis has been applied. The analysis for argon indicates an asymptotic convergence for electron and positron projectiles – the high energy parameters of the both fits are equal within the uncertainty limits. No such a clear conclusion is possible with the present data up to 5000 eV for krypton
SIMS analytical conditions optimized to reduce the morphology induced by sputtering with an oblique O2+ beam
No full text
Sample holder implement for very small samples on SC-Ultra SIMS instrument
No full textFor the most part of SIMS analyses the available samples are wide enough to be cut down to the sample holder dimensions; nevertheless in some special case one has to face very small specimens (even 1x1mm2), because of the high cost of material or simply because of their low availability. Typical examples can be SiC specimens or decapsulate Si devices. The edge of a typical sample holder window compared to the flat sample surface appears like a macroscopic step, where the electric field is distorted and the primary/secondary beams alignment is consequently affected. This edge effect becomes critical if the sample dimensions are comparable to the edge thickness. For SIMS analyses it is of prime importance to have a flat surface in the sputtering area and in the surrounding surface too, therefore we made a special sample holder for very small specimens in order to fulfill these conditions. A new mask has been designed and realized to easily put in it the smallest pieces; precision of the modified sample holder has been tested obtaining suitable result
- …
