5 research outputs found

    Characterization of low pressure plasma-<i>dc</i> glow discharges (Ar, SF<sub>6</sub> and SF<sub>6</sub>/He) for Si etching

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    723-730Low-pressure plasma reactor which is generated for SF6, SF6/He and Ar gases discharges between two metal electrodes (planer –parallel) using dc-high voltage power supply of 2 kV has been proposed. Paschen’s curves show the breakdown voltage of gases as a function of the parameter p*d which is the product of the pressure in the chamber (P=6.5´10-2-1.5´10-1 mbar) and the distance between the two electrodes (d=4.6 cm). The minimum breakdown voltages were found 450 V at pressure of 1.35´10-1mbar and 276 V at pressure of 4.3´10-1 mbar for SF6 and Ar, respectively. Current-voltage characteristics have been studied at different values of pressure (6.5´10-2-1.5´10-1 mbar) and inter-electrodes spacing (3.4, 4.2, 4.6, 5 cm). The SF6, SF6/He and Ar gases discharges plasmas in Si etching have been discusse

    MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF SP DEPOSITED CADMIUM SULPHIDE THIN FILMS

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    ABSTRACT Thin film of CdS has been deposited onto clean glass substrate by using Spray pyrolysis technique. Results of Morphological (AFM) studied; electrical properties and optical conductivity studied are analysis. AFM results show a crystalline nature of the films. From the conductivity measurement at different temperatures, the activation energy of the films was calculated and found to be between 0.188 -0.124 eV for low temperature regions, and between 1.67-1.19eV for high temperature regions. Hall measurements of electrical properties at room temperature show that the resistivity and mobility of CdS polycrystalline films deposited at 400 C 0 , were 3.878x10 3 Ω. cm and 1.302x10 4 cm 2 / (V.s), respectively. The electrical conductivity of the films was found to be in the range of 10 -4 −10 -6 (Ω. cm) -1 with ntype of conduction mechanism, which is suitable as optical windows for efficient solar cells
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