5 research outputs found
Macro controlling of copper oxide deposition processes and spray mode by using home-made fully computerized spray pyrolysis system
Mathematical Calculations Of Heat Transfer For The CNC Deposition Platform Based On Chemical Thermal Method
Characterization of low pressure plasma-<i>dc</i> glow discharges (Ar, SF<sub>6</sub> and SF<sub>6</sub>/He) for Si etching
723-730Low-pressure
plasma reactor which is generated for SF6, SF6/He and Ar gases discharges
between two metal electrodes (planer –parallel) using dc-high voltage power supply of 2 kV has been proposed. Paschen’s
curves show the breakdown voltage of gases as a function of the parameter p*d
which is the product of the pressure in the chamber (P=6.5´10-2-1.5´10-1 mbar) and the distance between
the two electrodes (d=4.6 cm). The minimum breakdown voltages
were found 450 V at pressure of 1.35´10-1mbar and 276 V at pressure of
4.3´10-1 mbar for SF6 and
Ar, respectively. Current-voltage characteristics have been studied at
different values of pressure (6.5´10-2-1.5´10-1 mbar) and inter-electrodes
spacing (3.4, 4.2, 4.6, 5 cm). The SF6, SF6/He and Ar gases
discharges plasmas in Si etching have been discusse
MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF SP DEPOSITED CADMIUM SULPHIDE THIN FILMS
ABSTRACT Thin film of CdS has been deposited onto clean glass substrate by using Spray pyrolysis technique. Results of Morphological (AFM) studied; electrical properties and optical conductivity studied are analysis. AFM results show a crystalline nature of the films. From the conductivity measurement at different temperatures, the activation energy of the films was calculated and found to be between 0.188 -0.124 eV for low temperature regions, and between 1.67-1.19eV for high temperature regions. Hall measurements of electrical properties at room temperature show that the resistivity and mobility of CdS polycrystalline films deposited at 400 C 0 , were 3.878x10 3 Ω. cm and 1.302x10 4 cm 2 / (V.s), respectively. The electrical conductivity of the films was found to be in the range of 10 -4 −10 -6 (Ω. cm) -1 with ntype of conduction mechanism, which is suitable as optical windows for efficient solar cells
