1,721,046 research outputs found
Correlation between Substrate Hot Electron Energy and Homogeneous Degradation in n-MOSFETs
No full textLow Voltage Hot Electrons and Soft-programming Lifetime Prediction in Non-Volatile Memory Cells
No full textAn Improved Test Structure to Characterize Ultra- Low Hot Carrier Injection in Homogeneous Conditions
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Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments
No full textExtensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substrate biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous electric fields typically needed to induce substrate hole injection, nonlocal effects take place that limit the possibility to accurately describe injection probability data by means of a unique set of lucky carrier model parameters
The Industry Standard Flash Memory Cell
No full textThis chapter gives thorough overview of the Industry Standard Flash memory cell. More than 85% of today Flash memories rely on this concept. We will describe the basic structure of the floating gate device, and its operating conditions. We will highlight the main differences in the technology and process with respect to a standard CMOS process. Finally, a brief introduction on some of the more important yield and reliability issues will be given
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