1,721,208 research outputs found
The Silence of the Amps: Integrated Circuits for Very-Low-Noise Processing of Random Signals from Radiation Detectors
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Emilio Gatti the Life and the Worldwide Heritage of a Founding Father of Electronics for Physics
No full textEmilio Gatti (1922–2016), professor of Physics and Electronics at the Politecnico di Milano (Italy), is internationally recognized as one of the scientists and engineers who has given fundamental contributions to the birth and development of the electronics and signal processing for the experimental physics related to ionizing radiation and particles, initially called Nuclear Electronics. His most famous contributions include the invention of the Charge Sensitive Amplifier, the sliding scale technique for precision Analog to Digital Converters, the Semiconductor Drift Chamber, and the theory and synthesis of optimum analog and digital filters for radiation and particle detector signal processing. Many of his inventions and scientific results are currently used as part of the instrumentation for fundamental sciences such as astrophysics, elementary particle physics, materials science, as well as in many medical and industrial applications. This paper presents the person of Emilio Gatti, his studies and inventions starting from his education at the University of Padua and early training at the Galileo Ferraris Institute and through to the schools of Electronics he established at the Politecnico di Milano and promoted in other universities. The paper describes the impact of his research activities and inventions made at CISE, at the Politecnico di Milano and within international collaborations at the Brookhaven National Laboratory (USA) and the Max-Planck Institute (Germany), as well as the impact he had in several companies
Study of the time response of 4H-SiC Schottky junctions for radiation high speed detection
Full text linkA study of the time response of 4H-SiC radiation detectors by means of a custom simulator is presented. The detector response to X-rays has been studied under different bias conditions and interaction points within the detector active region. The contributions of electrons and holes to the current and voltage signals have been disentangled to determine their effects on the detector response speed. Signal rise-times between 340 ps and 710 ps and pulse widths of 0.93 ns and 1.12 ns Full Width at Half Maximum (FWHM) have been derived, in good agreement with experimental results
Zero-power current conveyor for DC stabilisation and system reset of fast current pulse amplifiers
No full textNoise Minimization of MOSFET Input Charge Amplifier based on Du and DN 1/f Models
No full textThe optimization of the noise performance of integrated CMOS charge amplifiers is studied in detail considering accurate 1/f noise modeling for the input MOSFET biased in strong inversion-saturation region. This work aims to generalize and correct previously published analyses which have been based on two limiting and sometimes not applicable assumptions: a fixed MOSFETs bias current and the general validity of the McWhorter 1/f noise model. This study considers the two main 1/f noise models: 1) the mobility fluctuation, known as Du or Hooge model, which is followed by p-channel MOSFETs and 2) the carriers number fluctuation, also known as DN or McWhorter model, which is applicable only for n channel MOSFETs. The front-end noise optimization is made with the 1/f component alone, thus determining the ultimate performance, and also considering the presence of series and parallel white noise sources. It is shown that different design criteria are valid of p- or n-channel MOSFETs: the Du model results in an optimum bias current and a different optimum gate with respect to DN model. Two-dimensions sub-optimum noise minimization criteria are derived when power or area constraints are imposed to the circuit design. Starting from experimental data on CMOS 1/f noise, examples of application of the presented analysis are shown to predict the lower limits of the 1/f noise contribution for the currently available CMOS technologies
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