1,721,144 research outputs found
Elliptic problems with convection terms in Orlicz spaces
Full text linkThe existence of a solution to a Dirichlet problem, for a class of nonlinear elliptic equations, with a convection term, is established. The main novelties of the paper stand on general growth conditions on the gradient variable, and on minimal assumptions on Ω. The approach is based on the method of sub and supersolutions. The solution is a zero of an auxiliary pseudomonotone operator build via truncation techniques. We present also some examples in which we highlight the generality of our growth conditions
Regular solutions for nonlinear elliptic equations, with convective terms, in Orlicz spaces
Full text linkWe establish some existence and regularity results to the Dirichlet problem, for a class of quasilinear elliptic equations involving a partial differential operator, depending on the gradient of the solution. Our results are formulated in the Orlicz-Sobolev spaces and under general growth conditions on the convection term. The sub- and supersolutions method is a key tool in the proof of the existence results
Constant sign and sign-changing solutions for quasilinear elliptic equations with Neumann boundary condition
No full textThrough variational methods, sub-supersolution and truncation techniques we prove the existence
of three nontrivial solutions for a quasilinear elliptic equation with Neumann boundary
condition. We provide sign information for each of these solutions: two of them are of opposite
constant sign and the third one is sign changing
Impact of Field-Plate Insulating Layer on Junction Breakdown Instability in OFT-Pw.MOSFET Devices
No full textIn this article, we investigate the junction breakdown instability in oxide-filled trench power MOSFETs, as a function of field-plate oxide characteristics. We compare the junction breakdown instability in devices adopting field-plate insulating layers thermally grown and low-pressure chemical vapor deposition process (LPCVD) deposited. We experimentally observe a different junction breakdown walk-out, depending on the field-plate insulating material. We found out that, by applying an electrical stress, besides the junction breakdown instability, a damage of the channel region is observed in the case of thermally grown field-plate oxide layer
Resonant neumann equations with indefinite linear part
No full textWe consider aseminonlinear Neumann problem driven by the p- Laplacian plus an indenite and unbounded potential. The reaction of the problem is resonant at ±∞ with respect to the higher parts of the spectrum. Using critical point theory, truncation and perturbation techniques, Morse theory and the reduction method, we prove two multiplicity theorems. One produces three nontrivial smooth solutions and the second four nontrivial smooth solutions
Bifurcation phenomena for the positive solutions of semilinear elliptic problems with mixed boundary conditions
No full textWe consider a parametric semilinear elliptic equation with a Cara-theodory reaction which exhibits competing nonlinearities. It is "concave" (sub-linear) near the origin and "convex" (superlinear) or linear near . Using variational methods based on the critical point theory, coupled with suitable truncation and comparison techniques, we prove a bifurcation-type theorem, describing the set of positive solutions as the parameter varies
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress
Full text linkIn this work we investigate the degradation mechanisms occurring in a p-channel trench-gate power MOSFET under High Temperature Gate Bias (HTGB) stress. The impact of negative bias temperature stress is analysed by evaluating relevant figures of merit for the considered device: threshold voltage, transconductance and on-resistance. Temperatures and gate voltages as large as 175 °C and −24 V, respectively, are adopted to accelerate the degradation in the device. Moreover, in order to investigate the origin of degradation mechanisms we analyse the interface states generation and the charge trapping processes, the impact of a switching gate voltage during the stress phase and the recovery phase after HTGB stress
Esperienze di evoluzione nella gestione computerizzata di un laboratorio di virologia trasfusionale.
No full textA nonlinear eigenvalue problem for the periodic scalar p-Laplacian
No full textWe study a parametric nonlinear periodic problem driven by the scalar p-Laplacian. We show that if λ̂1> 0 is the first eigenvalue of the periodic scalar p-Laplacian and λ > λ̂1, then the problem has at least three nontrivial solutions one positive, one negative and the third nodal. Our approach is variational together with suitable truncation, perturbation and comparison techniques
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