103,782 research outputs found
A critical review of the fundamental semiconductor equations
No full textBaccarani, G.; Odeh, F.; Gnudi, A.; Ventura, D.. (1992). A critical review of the fundamental semiconductor equations. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/2159
Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs
No full textThe Schroedinger equation, or the coupled Schroedinger and Poisson equations, are transformed into an integral equation. Back-substituting from the original equations allows one to approximate the numerical corrections to any order without the need of calculating derivatives of the unknown function of order larger than one. Typical applications are in the numerical analysis of quantum transport in nanowires and nanotubes in the ballistic regime
Pensieri per il management nel tempo dell'imprevedibilità e delle sorprese
No full textRicorda che per decollare è necessario andare contro vento, Henry Ford
Di cosa tratta il libro? Tratta del management, cioè dell’arte di guidare e gestire le imprese.
Ne parla collocando l’azione manageriale in un contesto ambientale imprevedibile. Contesto che richiede la capacità di leggere il divenire aziendale tra le righe di un tumultuoso cambiamento.
L’approccio è inusuale. Il libro non propone formule magiche per la soluzione dei problemi introdotti dalla complessità.
I problemi sono opportunità in abiti da lavoro, Francis Ford Coppola
Il libro propone pensieri, propone aforismi, propone provocazioni intellettuali all’imprenditore e al manager.
Propone una strada capace di “liberare” le conoscenze presenti nella cultura di chi vive l’impresa.
Conoscenze spesso imprigionate dalla velocità di un “fare”che offusca la capacità di costruire il futuro con piena consapevolezza di sé.
Propone al management di riservare un tempo al pensiero, per accedere al proprio potenziale e vedere tutte le opportunità che anche le più tetre minacce portano con sé.
Non avere tempo per meditare è come non avere tempo di guardare dove si va perché si è troppo impegnati a camminare, Antonin- Dalmace Sertillange
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
No full textIn this work, we investigate the electrical properties of the Double-Gate MOSFET (DG-MOSFET), which turn out to be very promising for device miniaturization below 0.1 -4im. A compact model which accounts for charge quantization within the channel, Fermi statistics, and nonstatic effects in the transport model is worked out. The main results of this investigation are: 1) the ideality factor in subthreshold is equal to unity, i.e., the slope of the turn-on characteristic is 60 mV/decade at room temperature; 2) the drain-induced barrier lowering is minimized by the shielding effect of the double gate, which allows us to reduce the channel length below 30 nm; and 3) the device transconductance per unit width is maximized by the combination of the double gate and by a strong velocity overshoot which occurs in response to the sudden variation of the electric field at the source end of the channel, and which can be further strengthened near the drain in view of the short device length. As a result, a sustained electron velocity of nearly twice the saturation velocity is achievable. The above results prove that the potential performance advantages of the double-gate device architecture may be worth the development effort. ) ©1999 IEEE
Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects
No full textA compact model for the Double-Gate MOSFET (DG-MOSFET) which fully accounts for quantum mechanical effects, including motion quantization normal to the Si-SiO2 interface, band splitting into subbands and non-static effects in the transport model is worked out. The model holds both in subthreshold and strong inversion, and ensures a smooth transition between the two regions. A simplified energy-balance transport model is worked out which allows us to compare the drain-current calculations with Monte Carlo data
Performance limits of CMOS technology and perspectives of quantum devices
No full textIn this work we examine the performance limits of CMOS technology in the nanometer regime. The starting point of our discussion is the 1999 International Technology Roadmap for Semiconductors, which represents the current view of Industry on the future evolution and prospects of microelectronics. Next, we shortly address the physical principles of single-electron devices, and speculate on the opportunities offered by them for the implementation of single-electron circuits for logic and memory applications. © 2000 Académie des sciences/Éditions scientifiques et médicales Elsevier SAS
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