1,721,040 research outputs found
Oxygen impurities in epitaxial silicon grown on Czochralski substrates: recent advances by micro FTIR spectroscopy
No full textInfrared study of oxygen precipitates in Czochralski grown silicon
No full textOxygen precipitation in the bulk of silicon wafers was investigated by using micro‐Fourier transform infrared spectroscopy. It was found that even at 1100 °C annealing (in single step) SiO2 precipitates are formed in platelet shape, in the bulk, giving rise to characteristic absorption peak in the infrared spectrum at 1230 cm−1. Complete mapping of wafer cross section demonstrated that these precipitates are not distributed homogeneously but are agglomerated in irregularly shaped clusters and are easily detectable up to distance of about 100 μm from the back surface and from the epi‐substrate interfac
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon
No full textElectron paramagnetic resonance spectra of S2 paramagnetic center in Float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H2 ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g 2X0066 0X0002, which, then broadens and transforms in a complex spec- trum at 120 K. This complex spectrum can be decomposed into isotropic and anisotropic component. The relative concentration of anisotropic component is larger in CZ-Si and smaller in FZ-Si than the respective isotropic compo- nent. The g tensor evaluated from the anisotropic component at 120 K shows that the spectrum originated from the center with trigonal symmetry. The involvement of hydrogen and oxygen atoms in the center has been discussed. It is suggested that the S2 center is developed in the multi-vacancy defect containing oxygen and hydrogen atoms. From reversible thermal eect of the linewidth narrowing the motional properties of the dangling bond in the S2 center is described by the activation energy of 0.03 eV. Ó 2000 Elsevier Science B.V. All rights reserved
Boron accumulation at epi-substrate silicon interface during epitaxial growth
No full textsilicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 μm), with boron being electrically unactive
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances
No full textA high quality of epitaxial silicon layers grown on Czochralski single crystal substrates is required in semiconductor technology, since it directly influences device parameters and yield. Unintentional doping of these layers from the substrate is well documented in the literature. However, we found no reports on unintentional contamination of epi-layers due to the oxygen present in the substrate.
The use of micro Fourier transform infrared spectroscopy in transversal mode is shown to be a powerful technique for oxygen profiling and precipitation studies at the same time. It is found that oxygen behaviour during epitaxial layer growth, even for lightly B and P doped substrates, is significantly different.
Oxygen, that in some cases diffuses into the grown epitaxial layer, tends to form precipitates there. This is an important consequence of outdiffusion since it directly influences the quality of the epitaxial layer
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