84 research outputs found
Accurate charge transport model for nanoionic memristive devices
No full textAbstract not availableAmirali Amirsoleimani, Jafar Shamsi, Majid Ahmadi, Arash Ahmadi, Shahpour Alirezaee, Karim Mohammadi, Mohammad Azim Karami, Chris Yakopcic, Omid Kavehei, Said Al-Saraw
SPAD timing jitter modeling using Fourier series
No full textIn this paper, a simple analytical model for the Gaussian’s peak response part of the timing jitter of single photon avalanche diodes (SPADs) is proposed using Fourier series in the multiplication time calculation. The multiplication time characterizes avalanche multiplication process speed in which low multiplication time suggests a swifter response time and a higher avalanche speed. This paper presents an analytical solution which results in a more accurate multiplication time. The model is verified for SPADs implemented in 0.15 and 0.18 μm standard CMOS process, and the accuracy of the proposed analytical method in full-width at half-maximum (FWHM) calculation is improved by 25% and 5% with respect to the numerical model, respectively
Low‐power compact tunable quenching configuration for minimizing afterpulsing in single‐photon avalanche diodes
No full textA Simulation Study of Electric Field Engineering with Multi-Level Pinned Photodiodes for Fast and Complete Charge Transfer
No full textIn a CMOS image sensor pixel, fast and complete charge transfer from pinned
photodiode (PPD) is desired and necessary in some applications. In special
cases such as time-of-flight imaging or large pinned photodiodes, the PPD
potential well shape highly affects the charge transfer performance and should
be engineered carefully. In the present work, a PPD structure named multi-level
PPD is introduced and examined through simulation study. Moreover, a fast and
effective way to analyze the pinning process for a lag-free design is
introduced. It is concluded that the proposed PPD achieves fast and complete
charge transfer without additional implementation masks or process steps. The
proposed PPD is compared with a similar conventional rectangular pixel and 31%
reduction in the charge transfer time is observed.Comment: This is a manuscript with 5 pages, 7 figures prepared for publication
in the field of electron device
Design of an Energy Harvesting Capable Pixel in 90 nm CMOS Technology Optimized for Implantable Retinal Prosthesis
No full textSensitivity Enhancement of Ion Sensitive Field Effect Transistor with High Mobility Semiconductor through TCAD Simulation
No full text
Neural Imaging Using Single-Photon Avalanche Diodes
No full textIntroduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing.
Methods: The neural imaging process using SPADs can be performed by means of florescence lifetime imaging (FLIM), time correlated single-photon counting (TCSPC), positron emission tomography (PET), and single-photon emission computed tomography (SPECT).
Results: This trend will result in more precise neural imaging cameras. While achieving low DCR SPADs is difficult in deep submicron technologies because of using higher doping profiles, higher PDPs are reported in green and blue part of light. Furthermore, the number of pixels integrated in the same chip is increasing with the technology progress which can result in the higher resolution of imaging.
Conclusion: This study proposes implemented SPADs in Deep-submicron technologies to be used in neural imaging cameras, due to the small size pixels and higher timing accuracies
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