36 research outputs found
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays
No full textWe present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers
Proof-of-concept structure for investigation of successive soft gate oxide breakdowns in two dimensions
No full text
