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Surface Modification Bonding at Low Temperature for Three-Dimensional Hetero-Integration
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Modified diffusion bond process for chemical mechanical polishing (CMP)-Cu at 150°C in ambient air
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Modified diffusion bonding for both Cu and SiO<inf>2</inf> at 150 &#x00B0;C in ambient air
No full textHomo/heterogeneous bonding of Cu, SiO<inf>2</inf>, and polyimide by low temperature vapor-assisted surface activation method
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