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Electronic and optoelectronic properties of black phosphorous

Author: Petr Neugebauer; Central European Institute of Technology CEITEC BUT, Brno University of Technology, PurkyÅˆova 123, Brno 61200, Czech Republic.
Vivek Chaudhary; Modeling Simulation & Data Analysis MOHAMMED VI POLYTECHNIC UNIVERSITY
Omar Mounkachi; Laboratoire de MatiÃ¨re CondensÃ©e et Sciences Interdisciplinaires (LaMCScI) B.P. 1014, Faculty of Science, Mohammed V University in Rabat, Morocco.
Abdelouahed ELFATIMY; Institute of Applied Physics Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.
Salma Lahbabi; Equipe ModÃ©lisation Applications, MathÃ©matiques et Informatiques (EMAMI), Laboratoire de Recherche en IngÃ©nierie, ENSEM, University Hassan II of Casablanca, Morocco.
Publication venue
Publication date: 2022
Field of study

Herein, we present the enormous capabilities of the most recent rediscovered 2D material named black phosphorous (BP). It offers a solution for several technological limitations that appears in conventional 2D materials such as transition metal dichalcogenides/oxides etc. In the present work, we have demonstrated the electronic and optoelectronic properties of BP via realizing field effect transistors.Â

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