69 research outputs found
Physics and characterization of transiet effects in SOI transistors.
No full textInvited paper in Proceedings of Insulating Films on Semiconductor INFOS 99, June 16-19, 1999, Erlangen, German
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
No full textFrontier Group, W. A. Lane et al. eds. ISBN 2-86332-248-
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress
No full textHot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium (D2) annealed devices. Two physical mechanisms are clearly recognized during low gate voltage stress (|VG| |VDS|), namely the Hot-Electron-Induced Punch-through (HE1P) and the Interface State Generation (ISG). The dependence of the degradation dynamics on the gate oxide thickness is discussed in detail, showing that the Deuterium giant isotope effect can improve the lifetime of deep sub-micron pMOSFET's by reducing the ISG process. Finally, the accelerated stress protocol commonly used to evaluate pMOSFET Hot-Carrier reliability is critically reviewed
Automatic Amplitude Control Loop for a 2-V, 2.5-GHz LC-tank VCO
No full textThe paper discusses the design of the automatic amplitude control circuit (AAC) for wireless-targeted oscillators, presenting a 2-V, 2.5-GHz LC-tank bipolar VCO. Potential phase noise degradation due to the amplitude loop is illustrated, along with design choices to avoid this effect. The circuit manufactured draws 7 mA in the VCO and less than 600 μA in the AAC, with SSCR=-104 dBc/Hz@100 kHz. Once normalized for power, Q-factor and operating frequency, this phase noise performance ranks first among the bipolar VCOs published so fa
Characterization of supercooled liquid Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> and its crystallization by ultrafast-heating calorimetry
No full textDifferential scanning calorimetry (DSC) is widely used to study the stability of amorphous solids, characterizing the kinetics of crystallization close to the glass-transition temperature Tg. We apply ultrafast DSC to the phase-change material Ge2Sb2Te5 (GST) and show that if the range of heating rates is extended to more than 104 K s-1, the analysis can cover a wider temperature range, up to the point where the crystal growth rate approaches its maximum. The growth rates that can be characterized are some four orders of magnitude higher than in conventional DSC, reaching values relevant for the application of GST as a data-storage medium. The kinetic coefficient for crystal growth has a strongly non-Arrhenius temperature dependence, revealing that supercooled liquid GST has a high fragility. Near Tg there is evidence for decoupling of the crystal-growth kinetics from viscous flow, matching the behaviour for a fragile liquid suggested by studies on oxide and organic systems
Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFET's.
No full text- …
